Invention Application
- Patent Title: FUSE MEMORY HAVING DISCHARGE CIRCUIT
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Application No.: US15354304Application Date: 2016-11-17
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Publication No.: US20170221574A1Publication Date: 2017-08-03
- Inventor: Tae-seong KIM , Cheol-ha Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2016-0010730 20160128
- Main IPC: G11C17/18
- IPC: G11C17/18 ; H01L27/112 ; H01L23/525 ; G11C17/16

Abstract:
A fuse memory comprising a discharge circuit is provided. The fuse memory includes a fuse cell array comprising fuse cells connected to read word lines, programs word lines, and bit lines arranged in rows and columns; and at least one discharge circuit arranged in each of the rows. The discharge circuit discharges a voltage level of a program word line of the fuse cells selected in a read mode to a ground voltage.
Public/Granted literature
- US09805818B2 Fuse memory having discharge circuit Public/Granted day:2017-10-31
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