公开(公告)号：US09805818B2

公开(公告)日：2017-10-31

申请号：US15354304

申请日：2016-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-seong Kim ,  Cheol-ha Lee

IPC: G11C17/16 ,  G11C17/18 ,  H01L27/112 ,  H01L23/525

CPC classification number: G11C17/18 ,  G11C17/16 ,  H01L23/5256 ,  H01L27/11206 ,  H01L28/00

Abstract: A fuse memory comprising a discharge circuit is provided. The fuse memory includes a fuse cell array comprising fuse cells connected to read word lines, programs word lines, and bit lines arranged in rows and columns; and at least one discharge circuit arranged in each of the rows. The discharge circuit discharges a voltage level of a program word line of the fuse cells selected in a read mode to a ground voltage.

公开(公告)号：US20170221574A1

公开(公告)日：2017-08-03

申请号：US15354304

申请日：2016-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-seong KIM ,  Cheol-ha Lee

IPC: G11C17/18 ,  H01L27/112 ,  H01L23/525 ,  G11C17/16

CPC classification number: G11C17/18 ,  G11C17/16 ,  H01L23/5256 ,  H01L27/11206 ,  H01L28/00

Abstract: A fuse memory comprising a discharge circuit is provided. The fuse memory includes a fuse cell array comprising fuse cells connected to read word lines, programs word lines, and bit lines arranged in rows and columns; and at least one discharge circuit arranged in each of the rows. The discharge circuit discharges a voltage level of a program word line of the fuse cells selected in a read mode to a ground voltage.