An imaging panel (10) includes a photodiode (15), and a metal layer (43) provided below the photodiode and being in contact with a TFT (14) via a contact hole (CH1). A method of producing the imaging panel (10) includes forming a metal film (43p) covering to protect a first insulating film (42), subsequently forming semiconductor films to configure an n-type amorphous silicon layer (151), an intrinsic amorphous silicon layer (152), and a p-type amorphous silicon layer (153), and further forming the photodiode (15) by patterning the semiconductor films through dry etching.