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    ACTIVE MATRIX SUBSTRATE
    2.
    发明申请
    ACTIVE MATRIX SUBSTRATE 审中-公开

    公开(公告)号：US20200052083A1

    公开(公告)日：2020-02-13

    申请号：US16485827

    申请日：2018-02-06

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Tadayoshi MIYAMOTO

    IPC: H01L29/423 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1368

    Abstract: An active matrix substrate includes a peripheral circuit including a TFT (30A) supported on a substrate (1). When viewed in a direction normal to the substrate (1), a first gate electrode (3) of the TFT (30A) includes a first edge portion and a second edge portion (3e1, 3e2) opposing each other. The first edge portion and the second edge portion extend across an oxide semiconductor layer (7) in a channel width direction. At least one of the first edge portion and the second edge portion includes, in a region overlapping with the oxide semiconductor layer (7), a first recess portion (40) recessed in a channel length direction and a first part (41) adjacent to the first recess portion in the channel width direction. When viewed in the direction normal to the substrate (1), a source electrode (8) or a drain electrode (9) of the TFT (30A) overlaps with at least a part of the first recess portion (40) and at least a part of the first part (41).

    SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 有权
    半导体器件，显示器件和用于制造半导体器件的方法

    公开(公告)号：US20160233309A1

    公开(公告)日：2016-08-11

    申请号：US15021776

    申请日：2014-08-12

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Tadayoshi MIYAMOTO ,  Kazuhide TOMIYASU

    IPC: H01L29/45 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

    CPC classification number: H01L29/45 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78651 ,  H01L29/7869

    Abstract: This semiconductor device includes a substrate and a thin film transistor supported on the substrate. The thin film transistor includes a gate electrode, a semiconductor layer, a gate-insulating layer provided between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode respectively making contact with the semiconductor layer. The source electrode and the drain electrode respectively include a main layer containing aluminum or copper, a lower layer having a first layer containing refractory metal and positioned at a substrate side of the main layer, and an upper layer having a second layer containing refractory metal. The upper layer is provided so as to cover an upper surface of the main layer and at least the section of the side face of the main layer that overlaps the semiconductor layer.

    Abstract translation: 该半导体器件包括衬底和支撑在衬底上的薄膜晶体管。 薄膜晶体管包括栅电极，半导体层，设置在栅电极和半导体层之间的栅极绝缘层，以及分别与半导体层接触的源电极和漏电极。 源电极和漏极分别包括含有铝或铜的主层，具有含有难熔金属的第一层并位于主层的衬底侧的下层和具有含有难熔金属的第二层的上层。 上层设置成覆盖主层的上表面和至少覆盖半导体层的主层的侧面的部分。

    DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME
    4.
    发明申请
    DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开

    公开(公告)号：US20190096922A1

    公开(公告)日：2019-03-28

    申请号：US16203732

    申请日：2018-11-29

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Tadayoshi MIYAMOTO ,  Fumiki NAKANO

    IPC: H01L27/12 ,  G02F1/1368

    CPC classification number: H01L27/1225 ,  G02F1/1368 ,  H01L27/1251 ,  H01L27/127

    Abstract: This display device is provided with: a circuit substrate having a display region and a non-display region; pixel-driving TFTs for driving pixels, formed in the display region and having source electrodes and drain electrodes being spaced apart from each other on an insulating film and a first active layer formed from an oxide semiconductor, provided on the opposite side from the insulating film so as to cover a separation section between a source electrode and a drain electrode and part of the source electrode and part of the drain electrode adjacent to the separation section; and a driver circuit TFT for driving the pixel-driving TFTs, formed in the non-display region and having a second active layer formed from a non-oxide semiconductor.

    ACTIVE MATRIX SUBSTRATE AND DEMULTIPLEXER CIRCUIT
    7.
    发明申请
    ACTIVE MATRIX SUBSTRATE AND DEMULTIPLEXER CIRCUIT 审中-公开

    公开(公告)号：US20190079330A1

    公开(公告)日：2019-03-14

    申请号：US16123045

    申请日：2018-09-06

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Kaoru YAMAMOTO ,  Akihiro ODA ,  Tadayoshi MIYAMOTO

    IPC: G02F1/1345 ,  G02F1/1343 ,  G02F1/1333 ,  G09G3/36 ,  H01L27/12

    Abstract: An active matrix substrate includes a demultiplexer circuit which includes a plurality of DMX circuit TFTs. Each of the DMX circuit TFTs includes a front-gate electrode (FG) supplied with a control signal from one of a plurality of control signal main lines ASW, BSW and a back-gate electrode (BG) supplied with a back-gate signal which is different from the control signal. The plurality of DMX circuit TFTs includes first DMX circuit TFTs (T1a, T1b) and second DMX circuit TFTs (T2a, T2b). The back-gate electrode of each of the first DMX circuit TFTs (T1a, T1b)is connected with a first back-gate signal main line (BGL(1)) which supplies a first back-gate signal and, the back-gate electrode of each of the second DMX circuit TFTs (T2a, T2b)is connected with a second back-gate signal main line (BGL(2)) which supplies a second back-gate signal which is different from the first back-gate signal.

    LIQUID CRYSTAL PANEL AND ACTIVE MATRIX SUBSTRATE USED THEREFOR
    9.
    发明申请
    LIQUID CRYSTAL PANEL AND ACTIVE MATRIX SUBSTRATE USED THEREFOR 有权
    液晶面板及其使用的主动矩阵基板

    公开(公告)号：US20160306247A1

    公开(公告)日：2016-10-20

    申请号：US15100700

    申请日：2014-11-28

    Applicant: SHARP KABUSHIKI KAISHA

    Inventor： Kazuatsu ITO ,  Tadayoshi MIYAMOTO ,  Seiichi UCHIDA

    IPC: G02F1/1362 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1339

    CPC classification number: G02F1/136286 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/133388 ,  G02F2201/123 ,  G02F2202/10 ,  G09G3/3648 ,  G09G2320/0219 ,  G09G2320/0247

    Abstract: A liquid crystal panel (100) includes a pair of substrates (10, 30); a liquid crystal layer (40) provided between the pair of substrates; and a sealing member (42) provided so as to surround the liquid crystal layer. A plurality of pixels (P1, P2) are provided in a matrix in a region surrounded by the sealing member. Each of the plurality of pixels includes an oxide semiconductor TFT (5) provided in one substrate (10) of the pair of substrates; and a pixel electrode (19) provided in the one substrate and connected with the oxide semiconductor TFT. Each of the plurality of pixels is configured such that when the oxide semiconductor TFT is switched from an on-state to an off-state, a level of a voltage to be applied to the liquid crystal layer by use of the pixel electrode is shifted in a negative direction by a pull-in voltage ΔVd. A pull-in voltage ΔVd1 in a first pixel (P1) among the plurality of pixels is lower than a pull-in voltage ΔVd2 in a second pixel (P2) located farther from the sealing member than the first pixel.

    Abstract translation: 液晶面板（100）包括一对基板（10,30）; 设置在所述一对基板之间的液晶层（40） 以及设置成围绕液晶层的密封构件（42）。 在由密封构件包围的区域中以矩阵形式设置多个像素（P1，P2）。 所述多个像素中的每一个包括设置在所述一对基板的一个基板（10）中的氧化物半导体TFT（5） 以及设置在所述一个基板中并与所述氧化物半导体TFT连接的像素电极（19）。 多个像素中的每一个被配置为使得当氧化物半导体TFT从导通状态切换到断开状态时，通过使用像素电极施加到液晶层的电压的电平在 通过引入电压ΔVd的负方向。 多个像素中的第一像素（P1）中的吸入电压ΔVd1低于位于比第一像素更远离密封构件的第二像素（P2）中的引入电压ΔVd2。

    THIN-FILM TRANSISTOR AND METHOD OF PRODUCING THIN-FILM TRANSISTOR
    10.
    发明申请
    THIN-FILM TRANSISTOR AND METHOD OF PRODUCING THIN-FILM TRANSISTOR 审中-公开

    公开(公告)号：US20200185527A1

    公开(公告)日：2020-06-11

    申请号：US16095390

    申请日：2017-04-20

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Tadayoshi MIYAMOTO

    IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66

    Abstract: A gate driver TFT 30 includes a first gate electrode 30a formed from a first metal film 15, a second gate electrode 31 formed from a second metal film 19 and overlapping a part of the first gate electrode 30a, an electrode 32 formed from the second metal film 19 overlapping a part of the first gate electrode 30a and disposed away from the second gate electrode 31 at an interval, channel portions 30d formed from the oxide semiconductor film 17 and one of which overlaps the second gate electrode 31 and another one of which overlaps the electrode 32, and a first low-resistance portion 33 formed from the oxide semiconductor film 17, the first-low resistance portion not overlapping the second gate electrode 31 and the electrode 32 and disposed between at least the channel portions 30d and having a resistance lower than that of the channel portions 30d.

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