Invention Application
- Patent Title: FILM FORMING METHOD AND FILM FORMING SYSTEM
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Application No.: US15437594Application Date: 2017-02-21
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Publication No.: US20170250072A1Publication Date: 2017-08-31
- Inventor: Yuya Takamura
- Applicant: Tokyo Electron Limited
- Priority: JP2016-034591 20160225; JP2016-208128 20161024
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/52 ; C23C16/24 ; C23C16/455 ; C23C16/458

Abstract:
A film forming method of depositing a thin film of a reaction product generated by a reaction between a raw material gas and a reactive gas on a substrate by alternately supplying the raw material gas and the reactive gas to the substrate accommodated in a processing container. The film forming method includes: storing the raw material gas in a reservoir; adsorbing the raw material gas on the substrate by supplying the raw material gas stored in the reservoir to the substrate; and reacting the raw material gas and the reactive gas with each other by supplying the reactive gas to the substrate on which the raw material gas is adsorbed to generate the reaction product; wherein the storing, the adsorbing, and the reacting are repeated a plurality of times, while a condition for the storing is changed at least once.
Public/Granted literature
- US10297439B2 Film forming method and film forming system Public/Granted day:2019-05-21
Information query
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