公开(公告)号：US20170250072A1

公开(公告)日：2017-08-31

申请号：US15437594

申请日：2017-02-21

Applicant: Tokyo Electron Limited

Inventor： Yuya Takamura

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/24 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/52 ,  H01L21/02211 ,  H01L21/0228

Abstract: A film forming method of depositing a thin film of a reaction product generated by a reaction between a raw material gas and a reactive gas on a substrate by alternately supplying the raw material gas and the reactive gas to the substrate accommodated in a processing container. The film forming method includes: storing the raw material gas in a reservoir; adsorbing the raw material gas on the substrate by supplying the raw material gas stored in the reservoir to the substrate; and reacting the raw material gas and the reactive gas with each other by supplying the reactive gas to the substrate on which the raw material gas is adsorbed to generate the reaction product; wherein the storing, the adsorbing, and the reacting are repeated a plurality of times, while a condition for the storing is changed at least once.

公开(公告)号：US11538678B2

公开(公告)日：2022-12-27

申请号：US17118874

申请日：2020-12-11

Applicant: Tokyo Electron Limited

Inventor： Masami Oikawa ,  Yuya Takamura

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34

Abstract: A deposition method according to one aspect of the present disclosure includes performing multiple execution cycles serially. Each of the multiple execution cycles includes: supplying a raw material gas into a process chamber; and supplying a reactant gas that reacts with the raw material gas. Among the multiple execution cycles, at least one execution cycle includes adjusting a pressure in the process chamber without supplying the raw material gas, and the adjusting of the pressure is performed prior to the supplying of the raw material gas.

公开(公告)号：US10297439B2

公开(公告)日：2019-05-21

申请号：US15437594

申请日：2017-02-21

Applicant: Tokyo Electron Limited

Inventor： Yuya Takamura

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/34 ,  C23C16/455

Abstract: A film forming method of depositing a thin film of a reaction product generated by a reaction between a raw material gas and a reactive gas on a substrate by alternately supplying the raw material gas and the reactive gas to the substrate accommodated in a processing container. The film forming method includes: storing the raw material gas in a reservoir; adsorbing the raw material gas on the substrate by supplying the raw material gas stored in the reservoir to the substrate; and reacting the raw material gas and the reactive gas with each other by supplying the reactive gas to the substrate on which the raw material gas is adsorbed to generate the reaction product; wherein the storing, the adsorbing, and the reacting are repeated a plurality of times, while a condition for the storing is changed at least once.