- 专利标题: METHODS OF FORMING NANOSTRUCTURES HAVING LOW DEFECT DENSITY
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申请号: US15606601申请日: 2017-05-26
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公开(公告)号: US20170263456A1公开(公告)日: 2017-09-14
- 发明人: Gurtej S. Sandhu
- 申请人: Micron Technology, Inc.
- 主分类号: H01L21/033
- IPC分类号: H01L21/033 ; B81C1/00 ; H01L21/308 ; H01L21/768
摘要:
A method of forming a nanostructure comprises forming self-assembled nucleic acids on at least a portion of a substrate. The method further comprises contacting the self-assembled nucleic acids on the at least a portion of a substrate with a solution comprising at least one repair enzyme to repair defects in the self-assembled nucleic acids. The method may comprise repeating the repair of defects in the self-assembled nucleic acids on the at least a portion of a substrate until a desired, reduced threshold level of defect density is achieved. A semiconductor structure comprises a pattern of self-assembled nucleic acids defining a template having at least one aperture therethrough. At least one of the apertures has a dimension of less than about 50 nm.
公开/授权文献
- US09911609B2 Methods of forming nanostructures having low defect density 公开/授权日:2018-03-06