- 专利标题: METHODS FOR METALIZING VIAS WITHIN A SUBSTRATE
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申请号: US15471401申请日: 2017-03-28
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公开(公告)号: US20170287728A1公开(公告)日: 2017-10-05
- 发明人: Rachel Eileen Dahlberg , Shrisudersan Jayaraman
- 申请人: CORNING INCORPORATED
- 主分类号: H01L21/48
- IPC分类号: H01L21/48 ; C25D7/12 ; C25D3/38 ; H01L21/683 ; H01L23/498
摘要:
Methods of metalizing vias within a substrate are disclosed. In one embodiment, a method of metalizing vias includes disposing a substrate onto a growth substrate. The substrate includes a first surface, a second surface, and at least one via. The first surface or the second surface of the substrate directly contacts a surface of the growth substrate, and the surface of the growth substrate is electrically conductive. The method further includes applying an electrolyte to the substrate such that the electrolyte is disposed within the at least one via. The electrolyte includes metal ions of a metal to be deposited within the at least one via. The method also includes positioning an electrode within the electrolyte, and applying a current and/or a voltage between the electrode and the substrate, thereby reducing the metal ions into the metal on the surface of the growth substrate within the at least one via.
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