- 专利标题: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
-
申请号: US15518368申请日: 2015-09-14
-
公开(公告)号: US20170309544A1公开(公告)日: 2017-10-26
- 发明人: Hiroshi KOBAYASHI , Shinnosuke SODA , Yohei OMOTO , Komei HAYASHI
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Chiyoda-ku
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Chiyoda-ku
- 优先权: JP2015-012184 20150126
- 国际申请: PCT/JP2015/075944 WO 20150914
- 主分类号: H01L23/473
- IPC分类号: H01L23/473 ; H01L23/367 ; H05K3/00 ; H05K3/34 ; H05K1/03 ; H05K3/40 ; H01L23/373
摘要:
A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes an insulating substrate, a semiconductor chip, a plate member, and a cooler. The insulating substrate includes insulating ceramics serving as an insulating plate, and conductive plates provided on opposite surfaces of the insulating ceramics. The semiconductor chip is provided on an upper surface of the insulating substrate. The plate member is bonded to a lower surface of the insulating substrate. The cooler is bonded to a lower surface of the plate member. At least one of bonding between a lower surface of the insulating substrate and the plate member and bonding between a lower surface of the plate member and the cooler is performed via a bonding member composed mainly of tin. Also, a cyclic stress of the plate member is smaller than a tensile strength of the bonding member.
公开/授权文献
信息查询
IPC分类: