Approaches herein provide model-based generation of dummy features used during processing of a semiconductor device (e.g., during a self-aligned via process). Specifically, at least one approach includes: generating a set of dummy features in proximity to a set of target features in a mask layout, evaluating a proximity of the set of dummy features to a metal layer of the semiconductor device, and removing a portion of the set of dummy features that is present within an established critical distance between the set of dummy features and the metal layer. Target design printability is further enhanced during photolithography by performing one or more of the following: merging two or more dummy features of the set of dummy features, and increasing a distance between adjacent dummy features of the set of dummy features by modifying a geometry of one or more of the set of dummy features.