- 专利标题： METHOD, APPARATUS, AND SYSTEM FOR IMPROVED CELL DESIGN HAVING UNIDIRECTIONAL METAL LAYOUT ARCHITECTURE
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申请号： US15149066申请日： 2016-05-06
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公开(公告)号： US20170323902A1公开(公告)日： 2017-11-09
- 发明人: Jia Zeng , Lei Yuan , Jongwook Kye , Harry J. Levinson
- 申请人： GLOBALFOUNDRIES INC.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 主分类号： H01L27/118
- IPC分类号： H01L27/118 ; H01L27/092 ; H01L23/528 ; H01L21/3205 ; H01L23/522 ; H01L21/768 ; H01L27/105 ; H01L27/02
摘要：
At least one method, apparatus and system disclosed involves circuit layout for comprising a unidirectional metal layout. A first trench silicide (TS) formation is formed in a first active area of a functional cell. A first CA formation if formed above the first TS formation. A first vertical metal formation is formed in a first metal layer from the first active area to a second active area of the functional cell. The first vertical metal formation is formed offset relative to, and in contact with, the CA formation. A second TS formation is formed in a second active area of the functional cell. A second CA formation is formed above the second TS formation. The CA formation is formed offset the first vertical metal formation, operatively coupling the first and second active areas.
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