- 专利标题: ION IMPLANTATION PROCESS AND ION IMPLANTED GLASS SUBSTRATES
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申请号: US15520908申请日: 2015-10-21
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公开(公告)号: US20170334775A1公开(公告)日: 2017-11-23
- 发明人: Benjamine NAVET , Pierre BOULANGER , Lionel VENTELON , Denis BUSARDO , Frederic GUERNALEC
- 申请人: AGC GLASS EUROPE , ASAHI GLASS CO LTD , QUERTECH INGENIERIE
- 申请人地址: BE Louvain-La-Neuve JP Chiyoda Ku FR Caen
- 专利权人: AGC GLASS EUROPE,ASAHI GLASS CO LTD,QUERTECH INGENIERIE
- 当前专利权人: AGC GLASS EUROPE,ASAHI GLASS CO LTD,QUERTECH INGENIERIE
- 当前专利权人地址: BE Louvain-La-Neuve JP Chiyoda Ku FR Caen
- 优先权: EP14190324.5 20141024
- 国际申请: PCT/EP2015/074400 WO 20151021
- 主分类号: C03C23/00
- IPC分类号: C03C23/00 ; C23C14/48
摘要:
The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, He, and N, setting the acceleration voltage for the extraction of the ions at a value comprised between 5 kV and 200 kV and setting the ion dosage at a value comprised between 1014 ions/cm2 and 2.5×1017 ions/cm2.The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.
公开/授权文献
- US10703674B2 Ion implantation process and ion implanted glass substrates 公开/授权日:2020-07-07
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