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公开(公告)号：US20170334775A1
公开(公告)日：2017-11-23
申请号：US15520908
申请日：2015-10-21
摘要： The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, He, and N, setting the acceleration voltage for the extraction of the ions at a value comprised between 5 kV and 200 kV and setting the ion dosage at a value comprised between 1014 ions/cm2 and 2.5×1017 ions/cm2.The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.
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公开(公告)号：US20190161404A1
公开(公告)日：2019-05-30
申请号：US16092461
申请日：2017-03-13
发明人： Benjamine NAVET , Pierre BOULANGER , Denis BUSARDO
摘要： A method for manufacturing antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, or O2, ionizing the source gas so as to form a mixture of single charge and multicharge ions of N, or O, forming a beam of single charge and multicharge ions of N, or O by accelerating with an acceleration voltage A between 13 kV and 40 kV and setting the ion dosage at a value between 5.56×1014×A/kV+4.78×1016 ions/cm2 and −2.22×1016×A/kV+1.09×1018 ions/cm2, as well as antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
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公开(公告)号：US20190119155A1
公开(公告)日：2019-04-25
申请号：US16092638
申请日：2017-03-13
发明人： Benjamine NAVET , Pierre BOULANGER
摘要： The invention concerns a method for manufacturing heat treatable antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, O2, or Ar, ionizing the source gas so as to form a mixture of single charge and multicharge ions of Ar, N, or O, forming a beam of single charge and multicharge ions of Ar, N, or O by accelerating with an acceleration voltage comprised between 15 kV and 60 kV and setting the ion dosage at a value comprised between 7.5×1016 and 7.5×1017 ions/cm2. The invention further concerns heat treatable and heat treated antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
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公开(公告)号：US11339089B2
公开(公告)日：2022-05-24
申请号：US16092395
申请日：2017-03-13
发明人： Benjamine Navet , Pierre Boulanger , Denis Busardo
IPC分类号： C03C23/00 , C03C3/097 , C03C3/087 , B32B17/10 , B60J1/00 , C03C3/062 , C03C3/064 , C03C3/078 , C03C3/083 , C03C3/085 , C03C3/089 , C03C3/091 , C03C4/02 , C03C4/18 , C23C14/58 , C23C14/48
摘要： A method for manufacturing neutral color antireflective glass substrates by ion implantation, the method including ionizing a N2 source gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A between 20 kV and 25 kV and setting the ion dosage at a value between 6×1016 ions/cm2 and −5.00×1015×A/kV+2.00×1017 ions/cm2. A neutral color antireflective glass substrates including an area treated by ion implantation with a mixture of simple charge and multicharge ions according to the method.
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公开(公告)号：US11066329B2
公开(公告)日：2021-07-20
申请号：US16092461
申请日：2017-03-13
发明人： Benjamine Navet , Pierre Boulanger , Denis Busardo
摘要： A method for manufacturing antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, or O2, ionizing the source gas so as to form a mixture of single charge and multicharge ions of N, or O, forming a beam of single charge and multicharge ions of N, or O by accelerating with an acceleration voltage A between 13 kV and 40 kV and setting the ion dosage at a value between 5.56×1014×A/kV+4.78×1016 ions/cm2 and −2.22×1016×A/kV+1.09×1018 ions/cm2, as well as antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
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6.发明申请公开(公告)号：US20190092683A1
公开(公告)日：2019-03-28
申请号：US16092346
申请日：2017-03-13
发明人： Benjamine NAVET , Pierre BOULANGER , Denis BUSARDO
摘要： The invention concerns a method for manufacturing scratch-resistant antireflective glass substrates by ion implantation, comprising ionizing a source gas of N2 so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N, by accelerating with an acceleration voltage comprised between 20 kV and 30 kV and an ion dosage comprised between 5×1016 ions/cm2 and 1017 ions/cm2. The invention further concerns scratch-resistant antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
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公开(公告)号：US20200325067A1
公开(公告)日：2020-10-15
申请号：US16092395
申请日：2017-03-13
发明人： Benjamine NAVET , Pierre BOULANGER , Denis BUSARDO
IPC分类号： C03C23/00 , B32B17/10 , C03C4/18 , C03C4/02 , C03C3/062 , C03C3/064 , C03C3/097 , C03C3/089 , C03C3/091 , C03C3/083 , C03C3/085 , C03C3/087 , C03C3/078 , B60J1/00
摘要： A method for manufacturing neutral color antireflective glass substrates by ion implantation, the method including ionizing a N2 source gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A between 20 kV and 25 kV and setting the ion dosage at a value between 6×1016 ions/cm2 and −5.00×1015×A/kV+2.00×1017 ions/cm2. A neutral color antireflective glass substrates including an area treated by ion implantation with a mixture of simple charge and multicharge ions according to the method.
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公开(公告)号：US10703674B2
公开(公告)日：2020-07-07
申请号：US15520908
申请日：2015-10-21
申请人： AGC GLASS EUROPE , AGC Inc. , QUERTECH INGENIERIE
摘要： The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, He, and N, setting the acceleration voltage for the extraction of the ions at a value comprised between 5 kV and 200 kV and setting the ion dosage at a value comprised between 1014 ions/cm2 and 2.5×1017 ions/cm2.The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.
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公开(公告)号：US20190161403A1
公开(公告)日：2019-05-30
申请号：US16092373
申请日：2017-03-13
发明人： Benjamine NAVET , Pierre BOULANGER , Denis BUSARDO
摘要： A method for manufacturing blue reflective glass substrates by ion implantation, the method including ionizing a N2 source gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A between 15 kV and 35 kV and a dosage D between −9.33×1015×A/kV+3.87×1017 ions/cm2 and 7.50×1017 ions/cm2. A blue reflective glass substrate including an area treated by ion implantation with a mixture of simple charge and multicharge ions according to the method.
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