A capacitively coupled plasma processing apparatus includes: a chamber body configured to provide a chamber; first and second electrodes installed such that an internal space of the chamber is defined between the first and second electrodes; a high frequency power supply; a matcher for impedance matching connected to the high frequency power supply; a transformer including a primary coil coupled to the high frequency power supply via the matcher, first and second secondary coils; and at least one impedance adjusting circuit having a variable impedance, and installed in at least one of a first serial circuit between the first electrode and a ground connected to the other end of the first secondary coil, and a second serial circuit between the second electrode and a ground connected to the other end of the second secondary coil.