公开(公告)号：US20200111645A1

公开(公告)日：2020-04-09

申请号：US16708856

申请日：2019-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira KOSHIISHI ,  Masaru SUGIMOTO ,  Kunihiko HINATA ,  Noriyuki KOBAYASHI ,  Chishio KOSHIMIZU ,  Ryuji OHTANI ,  Kazuo KIBI ,  Masashi SAITO ,  Naoki MATSUMOTO ,  Yoshinobu OHYA ,  Manabu IWATA ,  Daisuke YANO ,  Yohei YAMAZAWA ,  Hidetoshi HANAOKA ,  Toshihiro HAYAMI ,  Hiroki YAMAZAKI ,  Manabu SATO

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

公开(公告)号：US20150132505A1

公开(公告)日：2015-05-14

申请号：US14538981

申请日：2014-11-12

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Shigehiro MIURA ,  Chishio KOSHIMIZU ,  Jun YAMAWAKU ,  Yohei YAMAZAWA

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32651

Abstract: A plasma processing apparatus is provided. According to the apparatus, a main antenna connected to a high frequency power source and an auxiliary antenna electrically insulated from main antenna is arranged. Moreover, projection areas when the main antenna and the auxiliary antenna are seen in a plan view are arranged so as not to overlap with each other. More specifically, the auxiliary antenna is arranged on a downstream side in a rotational direction of the turntable relative to the main antenna. Then, a first electromagnetic field is generated in the auxiliary antenna by way of an induction current flowing through the main antenna, and a second induction plasma is generated even in an area under the auxiliary antenna in addition to an area under the main antenna by resonating the auxiliary antenna.

Abstract translation: 提供了一种等离子体处理装置。 根据该装置，设置连接到高频电源的主天线和与主天线电绝缘的辅助天线。 此外，在平面图中看到主天线和辅助天线的投影区域被布置成彼此不重叠。 更具体地，辅助天线布置在转台相对于主天线的旋转方向的下游侧。 然后，通过流经主天线的感应电流在辅助天线中产生第一电磁场，除辅助天线之下的区域之外，还产生第二感应等离子体 辅助天线。

公开(公告)号：US20240304421A1

公开(公告)日：2024-09-12

申请号：US18668416

申请日：2024-05-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32724

Abstract: There is provided a filter circuit provided in a plasma processing device for processing a substrate using plasma generated using power of a first frequency of 4 MHz or more and power of a second frequency of 100 Hz or more and less than 4 MHz. The filter circuit comprises: a first filter provided in a wiring between a conductive member provided in the plasma processing device and a power supply configured to supply power of a third frequency of less than 100 Hz or control power which is direct-current (DC) power, to the conductive member; and a second filter provided in a wiring between the first filter and the power supply.

公开(公告)号：US20200058467A1

公开(公告)日：2020-02-20

申请号：US16662715

申请日：2019-10-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Kazuki DENPOH ,  Jun YAMAWAKU

IPC: H01J37/32 ,  C23C16/505

Abstract: A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion.

公开(公告)号：US20150014276A1

公开(公告)日：2015-01-15

申请号：US14325457

申请日：2014-07-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA

IPC: H01J37/32

CPC classification number: H01J37/32697 ,  H01J37/02 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32137 ,  H01J37/32174 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/3341

Abstract: A plasma processing method for performing a plasma process on a processing target substrate is provided. The plasma processing method includes: segmenting a RF antenna into an inner coil, an intermediate coil, and an outer coil with gaps therebetween in a radial direction, respectively, the inner coil, the intermediate coil and the outer coil being electrically connected to one another in parallel between a first node and a second node; providing a variable intermediate capacitor and a variable outer capacitor between the first node and the second node, the variable intermediate capacitor being electrically connected in series to the intermediate coil, the variable outer capacitor being electrically connected in series to the outer coil, no reactance device being connected to the inner coil; and controlling plasma density distribution on the processing target substrate by selecting or variably adjusting electrostatic capacitances of the intermediate capacitor and the outer capacitor.

Abstract translation: 提供了一种在处理对象基板上进行等离子体处理的等离子体处理方法。 等离子体处理方法包括：分别将RF天线分割成内部线圈，中间线圈和在径向方向上具有间隙的外部线圈，内部线圈，中间线圈和外部线圈彼此电连接 在第一节点和第二节点之间并行; 在所述第一节点和所述第二节点之间提供可变中间电容器和可变外部电容器，所述可变中间电容器与所述中间线圈串联电连接，所述可变外部电容器与所述外部线圈串联电连接， 连接到内线圈; 以及通过选择或可变地调节中间电容器和外部电容器的静电电容来控制处理目标衬底上的等离子体密度分布。

公开(公告)号：US20140216346A1

公开(公告)日：2014-08-07

申请号：US14250514

申请日：2014-04-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Chishio KOSHIMIZU ,  Masashi SAITO ,  Kazuki DENPOH ,  Jun YAMAWAKU

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01L21/67109 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

公开(公告)号：US20220148854A1

公开(公告)日：2022-05-12

申请号：US17520500

申请日：2021-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA

IPC: H01J37/32

Abstract: There is provided a filter circuit provided in a plasma processing device for processing a substrate using plasma generated using power of a first frequency of 4 MHz or more and power of a second frequency of 100 Hz or more and less than 4 MHz. The filter circuit comprises: a first filter provided in a wiring between a conductive member provided in the plasma processing device and a power supply configured to supply power of a third frequency of less than 100 Hz or control power which is direct-current (DC) power, to the conductive member; and a second filter provided in a wiring between the first filter and the power supply.

公开(公告)号：US20190098740A1

公开(公告)日：2019-03-28

申请号：US16144714

申请日：2018-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Takehisa SAITO ,  Mayo UDA ,  Keigo TOYODA ,  Alok RANJAN ,  Toshiki NAKAJIMA

IPC: H05H1/46 ,  H05H1/24 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.

公开(公告)号：US20170032936A1

公开(公告)日：2017-02-02

申请号：US15290846

申请日：2016-10-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira KOSHIISHI ,  Masaru SUGIMOTO ,  Kunihiko HINATA ,  Noriyuki KOBAYASHI ,  Chishio KOSHIMIZU ,  Ryuji OHTANI ,  Kazuo KIBI ,  Masashi SAITO ,  Naoki MATSUMOTO ,  Manabu IWATA ,  Daisuke YANO ,  Yohei YAMAZAWA ,  Hidetoshi HANAOKA ,  Toshihiro HAYAMI ,  Hiroki YAMAZAKI ,  Manabu SATO

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32697 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/3065

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.

Abstract translation: 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US20160203951A1

公开(公告)日：2016-07-14

申请号：US15079381

申请日：2016-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Chishio KOSHIMIZU ,  Kazuki DENPOH ,  Jun YAMAWAKU ,  Masashi SAITO

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/3211 ,  C23C16/455 ,  C23C16/50 ,  H01J37/321 ,  H01J37/3244 ,  H05H1/46

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.

Abstract translation: 一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈形RF天线; 基板支撑单元，设置在处理室中，用于在其上安装待处理的目标基板; 处理气体供应单元，用于将所需的处理气体供应到处理室以对目标基板执行所需的等离子体处理; 以及RF电源单元，用于向RF天线提供RF功率，以通过处理室中的感应耦合产生处理气体的等离子体。 该装置还包括一个浮动线圈，其浮动并布置在处理室外部的位置处，浮动线圈将通过电磁感应与RF天线耦合; 以及设置在浮动线圈的环路中的电容器。