- 专利标题: Methods for Forming Ceramic Substrates with Via Studs
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申请号: US15611779申请日: 2017-06-01
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公开(公告)号: US20170338127A1公开(公告)日: 2017-11-23
- 发明人: Ananda H. Kumar
- 申请人: Ananda H. Kumar
- 主分类号: H01L21/48
- IPC分类号: H01L21/48 ; G01R31/26 ; G01R1/04 ; H05K3/40 ; H05K3/46 ; G01R3/00 ; H05K1/11
摘要:
This document describes the fabrication and use of multilayer ceramic substrates, having one or more levels of internal thick film metal conductor patterns, wherein any or all of the metal vias intersecting one or both of the major surface planes of the substrates, extend out of the surface to be used for making flexible, temporary or permanent interconnections, to terminals of an electronic component. Such structures are useful for wafer probing, and for packaging, of the semiconductor devices.
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