Invention Application
- Patent Title: METHOD FOR PRODUCING ON THE SAME TRANSISTORS SUBSTRATE HAVING DIFFERENT CHARACTERISTICS
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Application No.: US15599663Application Date: 2017-05-19
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Publication No.: US20170338157A1Publication Date: 2017-11-23
- Inventor: Nicolas POSSEME , Laurent GRENOUILLET
- Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Priority: FR1654556 20160520
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/32 ; H01L21/3115 ; H01L21/84 ; H01L21/311
Abstract:
A method is provided for producing at least one first transistor and at least one second transistor on the same substrate, including producing at least one first gate pattern and at least one second gate pattern on the substrate; depositing at least one first protective layer on the first and the second gate patterns; depositing, on the first and the second gate patterns, at least a first protective layer and a second protective layer overlying, the first protective layer, the second protective layer being made from a different material than that of the first protective layer; masking the second gate pattern by a masking layer; isotropic etching of the second protective layer; removing the masking layer; and anisotropic etching of the second protective layer selectively relative to the first protective layer.
Public/Granted literature
- US10026657B2 Method for producing on the same transistors substrate having different characteristics Public/Granted day:2018-07-17
Information query
IPC分类:
