Invention Application
- Patent Title: DIFFUSION TOLERANT III-V SEMICONDUCTOR HETEROSTRUCTURES AND DEVICES INCLUDING THE SAME
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Application No.: US15527221Application Date: 2014-12-23
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Publication No.: US20170345900A1Publication Date: 2017-11-30
- Inventor: HAROLD W. KENNEL , MATTHEW V. METZ , WILLY RACHMADY , GILBERT DEWEY , CHANDRA S. MOHAPATRA , ANAND S. MURTHY , JACK T. KAVALIEROS , TAHIR GHANI
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- International Application: PCT/US2014/072213 WO 20141223
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L21/02 ; H01L21/18
Abstract:
Semiconductor devices including a subfin including a first III-V compound semiconductor and a channel including a second III-V compound semiconductor are described. In some embodiments the semiconductor devices include a substrate including a trench defined by at least two trench sidewalls, wherein the first III-V compound semiconductor is deposited on the substrate within the trench and the second III-V compound semiconductor is epitaxially grown on the first III-V compound semiconductor. In some embodiments, a conduction band offset between the first III-V compound semiconductor and the second III-V compound semiconductor is greater than or equal to about 0.3 electron volts. Methods of making such semiconductor devices and computing devices including such semiconductor devices are also described.
Information query
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