Invention Application
- Patent Title: MANUFACTURING METHOD OF TFT BACKPLANE AND TFT BACKPLANE
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Application No.: US15120748Application Date: 2016-06-27
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Publication No.: US20170352711A1Publication Date: 2017-12-07
- Inventor: Xiaoxing Zhang , Xingyu Zhou , Yuanjun Hsu
- Applicant: Shenzhen China Star Optoelectronics Technology Co. Ltd.
- Priority: CN201610409643.0 20160607
- International Application: PCT/CN2016/087326 WO 20160627
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L51/00 ; H01L51/52 ; H01L51/56

Abstract:
The present invention provides a manufacture method of a TFT backplate and a TFT backplate. By utilizing the oxide semiconductor to manufacture the switch TFT, and utilizing the advantages of rapid switch and lower leakage current of the oxide semiconductor, the switch speed of the switch TFT is raised and the leakage current is lowered; by utilizing the polysilicon to manufacture the drive TFT, and utilizing the properties of higher electron mobility and the uniform grain of the polysilicon, the electron mobility and the current output consistency of the drive TFT is promoted. These are beneficial for the promotion of the light uniformity of the OLED element.
Information query
IPC分类: