Invention Application
- Patent Title: SEMICONDUCTOR DEVICES INCLUDING CONTACT STRUCTURES THAT PARTIALLY OVERLAP SILICIDE LAYERS
-
Application No.: US15686838Application Date: 2017-08-25
-
Publication No.: US20170352728A1Publication Date: 2017-12-07
- Inventor: Do-Sun Lee , Chang-Woo Sohn , Chul-Sung Kim , Shigenobu Maeda , Young-Moon Choi , Hyo-Seok Choi , Sang-Jin Hyun
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2015-0052355 20150414
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/417 ; H01L29/165 ; H01L29/161 ; H01L29/78 ; H01L29/06
Abstract:
Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes an isolation layer defining active portions of the substrate that are spaced apart from each other in a direction. The semiconductor device includes an epitaxial layer on the active portions. The semiconductor device includes a metal silicide layer on the epitaxial layer. Moreover, the semiconductor device includes a contact structure that only partially overlaps the metal silicide layer on the epitaxial layer. Related methods of forming semiconductor devices are also provided.
Public/Granted literature
- US10403717B2 Semiconductor devices including contact structures that partially overlap silicide layers Public/Granted day:2019-09-03
Information query
IPC分类:
