发明申请
- 专利标题： SEMICONDUCTOR DEVICE
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申请号： US15430695申请日： 2017-02-13
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公开(公告)号： US20170372978A1公开(公告)日： 2017-12-28
- 发明人: Seiji OKA , Hiroshi YOSHIDA , Hidetoshi ISHIBASHI , Yuji IMOTO , Daisuke MURATA , Kenta NAKAHARA
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2016-124711 20160623
- 主分类号： H01L23/10
- IPC分类号： H01L23/10 ; H01L25/07 ; H01L23/057 ; H01L21/48 ; H01L21/56 ; H01L21/52 ; H02M7/537 ; H01L23/31
摘要：
A relay substrate in which a circuit pattern and an external electrode are integrated on a insulating plate is used in the semiconductor device. Such configuration makes it possible to reduce a resistance in a current path while preventing the problems occurring when the external electrode is soldered on the semiconductor chip.
公开/授权文献
- US10068819B2 Semiconductor device 公开/授权日：2018-09-04
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