发明申请
- 专利标题： P-DOPING OF GROUP-III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUBSTRATE
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申请号： US15700289申请日： 2017-09-11
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公开(公告)号： US20170373156A1公开(公告)日： 2017-12-28
- 发明人: Stephan LUTGEN , Saad MURAD , Ashay CHITNIS
- 申请人： AZURSPACE Solar Power GmbH
- 申请人地址： DE Heilbronn
- 专利权人： AZURSPACE Solar Power GmbH
- 当前专利权人： AZURSPACE Solar Power GmbH
- 当前专利权人地址： DE Heilbronn
- 优先权： EP13155540.1 20130215
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L21/02 ; H01L29/778 ; H01L29/872 ; H01L29/207 ; H01L29/20 ; H01L29/15 ; H01L29/10 ; H01L33/00 ; H01L29/36
摘要：
An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-ill-nitride layer, wherein the interlayer structure comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm-3, by at least a factor of two in transition from the interlayer structure to the first and second group-ill-nitride layers.
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