公开(公告)号：US20150357419A1

公开(公告)日：2015-12-10

申请号：US14828148

申请日：2015-08-17

申请人： AZURSPACE Solar Power GmbH

发明人： Stephan LUTGEN ,  Saad MURAD ,  Ashay CHITNIS

IPC分类号： H01L29/205 ,  H01L29/778 ,  H01L21/02 ,  H01L33/00 ,  H01L29/15 ,  H01L29/36 ,  H01L29/872

CPC分类号： H01L29/205 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02579 ,  H01L29/1075 ,  H01L29/151 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/872 ,  H01L33/0025

摘要： An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-ill-nitride layer, wherein the interlayer structure comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm-3, by at least a factor of two in transition from the interlayer structure to the first and second group-ill-nitride layers.

摘要翻译： 外延基团氮化物缓冲层结构提供在异质基底上，其中缓冲层结构具有至少一个应力管理层序列，其包括布置在第一和第二组 - 氮化物层，其中所述层间结构包括具有比所述第一和第二组氮化物层的材料更大的带隙的组氮化物中间层材料，并且其中p型掺杂剂浓度分布下降，起始 从层间结构向第一和第二组氮化物层转变的至少1×10 18 cm -3至少两倍。

公开(公告)号：US20180331187A1

公开(公告)日：2018-11-15

申请号：US16026630

申请日：2018-07-03

申请人： AZURSPACE Solar Power GmbH

发明人： Stephan LUTGEN ,  Saad MURAD ,  Ashay CHITNIS

IPC分类号： H01L29/205 ,  H01L29/15 ,  H01L21/02 ,  H01L29/872 ,  H01L29/778 ,  H01L29/36 ,  H01L29/10 ,  H01L29/207 ,  H01L29/20 ,  H01L33/00

CPC分类号： H01L29/205 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02579 ,  H01L29/1075 ,  H01L29/151 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/872 ,  H01L33/0025

摘要： An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-ill-nitride layer, wherein the interlayer structure comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm−3, by at least a factor of two in transition from the interlayer structure to the first and second group-ill-nitride layers.

公开(公告)号：US20170373156A1

公开(公告)日：2017-12-28

申请号：US15700289

申请日：2017-09-11

申请人： AZURSPACE Solar Power GmbH

发明人： Stephan LUTGEN ,  Saad MURAD ,  Ashay CHITNIS

IPC分类号： H01L29/205 ,  H01L21/02 ,  H01L29/778 ,  H01L29/872 ,  H01L29/207 ,  H01L29/20 ,  H01L29/15 ,  H01L29/10 ,  H01L33/00 ,  H01L29/36

CPC分类号： H01L29/205 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02579 ,  H01L29/1075 ,  H01L29/151 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/872 ,  H01L33/0025

摘要： An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-ill-nitride layer, wherein the interlayer structure comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm-3, by at least a factor of two in transition from the interlayer structure to the first and second group-ill-nitride layers.

公开(公告)号：US20170077242A1

公开(公告)日：2017-03-16

申请号：US15341590

申请日：2016-11-02

申请人： AZURSPACE Solar Power GmbH

发明人： Stephan LUTGEN ,  Saad MURAD ,  Ashay CHITNIS

IPC分类号： H01L29/205 ,  H01L29/872 ,  H01L29/778 ,  H01L29/20 ,  H01L29/207

CPC分类号： H01L29/205 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02579 ,  H01L29/1075 ,  H01L29/151 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/872 ,  H01L33/0025

摘要： An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-ill-nitride layer, wherein the interlayer structure comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm-3, by at least a factor of two in transition from the interlayer structure to the first and second group-ill-nitride layers.

摘要翻译： 外延基团氮化物缓冲层结构提供在异质基底上，其中缓冲层结构具有至少一个应力管理层序列，其包括布置在第一和第二组 - 氮化物层，其中所述层间结构包括具有比所述第一和第二组氮化物层的材料更大的带隙的组氮化物中间层材料，并且其中p型掺杂剂浓度分布下降，起始 从层间结构向第一和第二组氮化物层转变的至少1×10 18 cm -3至少两倍。