Invention Application
- Patent Title: CARRIER SUBSTRATES FOR SEMICONDUCTOR PROCESSING
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Application No.: US15632886Application Date: 2017-06-26
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Publication No.: US20180005847A1Publication Date: 2018-01-04
- Inventor: Sumalee Likitvanichkul Fagan , Weiguo Miao , Eric James Nichols
- Applicant: CORNING INCORPORATED
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/367 ; B29C70/72 ; H01L23/498 ; B29C65/00

Abstract:
A carrier substrate includes a base layer having a first surface, and having a second surface that is parallel to and opposite of the first surface. The carrier substrate further includes a glass layer bonded to the first surface of the base layer. The carrier substrate has a Young's modulus greater than or equal to 150 GPa. A carrier substrate includes a polycrystalline ceramic and has a Young's modulus greater than or equal to 150 GPa. The carrier substrate has a coefficient of thermal expansion of greater than or equal to 20×10−7/° C. to less than or equal to 120×10−7/° C. over a range from 25° C. to 500° C.
Public/Granted literature
- US10580666B2 Carrier substrates for semiconductor processing Public/Granted day:2020-03-03
Information query
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