CARRIER SUBSTRATES FOR SEMICONDUCTOR PROCESSING

    公开(公告)号:US20180005847A1

    公开(公告)日:2018-01-04

    申请号:US15632886

    申请日:2017-06-26

    Abstract: A carrier substrate includes a base layer having a first surface, and having a second surface that is parallel to and opposite of the first surface. The carrier substrate further includes a glass layer bonded to the first surface of the base layer. The carrier substrate has a Young's modulus greater than or equal to 150 GPa. A carrier substrate includes a polycrystalline ceramic and has a Young's modulus greater than or equal to 150 GPa. The carrier substrate has a coefficient of thermal expansion of greater than or equal to 20×10−7/° C. to less than or equal to 120×10−7/° C. over a range from 25° C. to 500° C.

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