A lateral insulated gate bipolar transistor, comprising: a substrate (100), having a first conductivity type; an insulating layer (200), formed on the substrate (100); an epitaxial layer (300), having a second conductivity type and formed on the insulating layer (200); a field oxide layer (400), formed on the epitaxial layer (300); a first well (500), having the first conductivity type; a plurality of gate trench structures (600); second source doped regions (720), having the second conductivity type; first source doped regions (710), having the first conductivity type; a second well (800), having the second conductivity type; a first drain doped region (910), having the first conductivity type and formed on a surface layer of the second well (800); gate lead-out ends (10); a source lead-out end (20); a drain lead-out end (30).