发明申请
- 专利标题: INTEGRATED RF LIMITER
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申请号: US15663322申请日: 2017-07-28
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公开(公告)号: US20180019714A1公开(公告)日: 2018-01-18
- 发明人: Thomas William Arell
- 申请人: Skyworks Solutions, Inc.
- 主分类号: H03F1/52
- IPC分类号: H03F1/52 ; H03F3/193
摘要:
A limiter circuit is integrated into an RF power amplifier. The limiter circuit automatically starts adding attenuation at the input of the RF power amplifier after a predetermined input power level threshold is exceeded, thereby extending the safe input drive level to protect the amplifier. In a preferred embodiment of the invention, the limiter circuit is implemented using a pseudomorphic high electron mobility transistor (PHEMT) device or a metal semiconductor field effect transistor (MESFET) device. Diode connected transistors or Schottky diodes may also be used in the limiter circuit.
公开/授权文献
- US10177721B2 Integrated RF limiter 公开/授权日:2019-01-08
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