A CMOS image sensor with reducing interconnections is provided. The CMOS image sensor may include a first row of pixels that includes a first pixel. The first pixel may include a first plurality of photodiodes and a first plurality of transfer gates. Each of the first plurality of photodiodes may be associated with a corresponding one of the first plurality of transfer gates. The CMOS image sensor may include a second row of pixels that includes a second pixel. The second pixel may include a second plurality of photodiodes and a second plurality of transfer gates. Each of the second plurality of photodiodes may be associated with a corresponding one of the second plurality of transfer gates. A first one of the transfer gates of the first plurality of transfer gates may be coupled to a first one of the transfer gates of the second plurality of transfer gates.