Invention Application
- Patent Title: PARTIAL METAL FILL FOR PREVENTING EXTREME-LOW-K DIELECTRIC DELAMINATION
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Application No.: US15268479Application Date: 2016-09-16
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Publication No.: US20180082776A1Publication Date: 2018-03-22
- Inventor: Zhongze Wang , Guoqing Chen
- Applicant: QUALCOMM Incorporated
- Main IPC: H01F27/28
- IPC: H01F27/28 ; H01F27/29 ; H01F41/04
Abstract:
A partial metal fill is provided within the footprint of an ultra-thick-metal (UTM) conductor on a dielectric layer to strengthen the dielectric layer to inhibit delamination of the UTM conductor without inducing significant electrical coupling between the UTM conductor and the partial metal fill.
Public/Granted literature
- US10194529B2 Partial metal fill for preventing extreme-low-k dielectric delamination Public/Granted day:2019-01-29
Information query
