Invention Application
- Patent Title: METHODS FOR SELECTIVE ETCHING OF A SILICON MATERIAL USING HF GAS WITHOUT NITROGEN ETCHANTS
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Application No.: US15823083Application Date: 2017-11-27
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Publication No.: US20180082849A1Publication Date: 2018-03-22
- Inventor: Nitin K. INGLE , Anchuan WANG , Zihui LI , Mikhail KOROLIK
- Applicant: Applied Materials, Inc.
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/3213 ; H01L21/311 ; H01J37/32 ; H01L21/308
Abstract:
The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a silicon material disposed on a substrate.
Public/Granted literature
- US10204796B2 Methods for selective etching of a silicon material using HF gas without nitrogen etchants Public/Granted day:2019-02-12
Information query
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