Invention Application
- Patent Title: METHOD AND STRUCTURE FOR FORMING FINFET CMOS WITH DUAL DOPED STI REGIONS
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Application No.: US15826949Application Date: 2017-11-30
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Publication No.: US20180082904A1Publication Date: 2018-03-22
- Inventor: Veeraraghavan S. Basker , Kangguo Cheng , Theodorus E. Standaert , Junli Wang
- Applicant: International Business Machines Corporation
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/167 ; H01L29/06 ; H01L27/092 ; H01L21/8238 ; H01L21/225 ; H01L21/324 ; H01L21/308
Abstract:
A method of making a semiconductor device includes forming a first fin of a first transistor in a substrate; forming a second fin of a second transistor in the substrate; disposing a first doped oxide layer including a first dopant onto the first fin and the second fin, the first dopant being an n-type dopant or a p-type dopant; disposing a mask over the first fin and removing the first doped oxide layer from the second fin; removing the mask and disposing a second doped oxide layer onto the first doped oxide layer over the first doped oxide layer covering the first fin and directly onto the second fin, the second doped oxide layer including an n-type dopant or a p-type dopant that is different than the first dopant; and annealing to drive in the first dopant into a portion of the first fin and the second dopant into a portion of the second fin.
Public/Granted literature
- US10249537B2 Method and structure for forming FinFET CMOS with dual doped STI regions Public/Granted day:2019-04-02
Information query
IPC分类:
