Invention Application
- Patent Title: SEMICONDUCTOR DEVICE RESISTOR STRUCTURE
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Application No.: US15271730Application Date: 2016-09-21
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Publication No.: US20180083089A1Publication Date: 2018-03-22
- Inventor: Hui Zang , Josef S. Watts , Shesh M. Pandey
- Applicant: GLOBALFOUNDRIES INC.
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/3205 ; H01L21/02 ; H01L27/06

Abstract:
A resistor body is separated from a doped well in a substrate by a resistor dielectric material layer. The doped well is defined by at least one doped region and can include a dopant gradient in the doped well to reduce parasitic capacitance of the resistor structure while retaining heat dissipation properties of the substrate. The resistor body is formed in a cavity in a dielectric layer deposited on the substrate, which deposition can be part of a concurrent fabrication, such as part of forming shallow trench isolations, and the cavity can be lined with the resistor dielectric material.
Public/Granted literature
- US09923046B1 Semiconductor device resistor structure Public/Granted day:2018-03-20
Information query
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