Invention Application
- Patent Title: VERTICAL VACUUM CHANNEL TRANSISTOR
-
Application No.: US15693938Application Date: 2017-09-01
-
Publication No.: US20180102432A1Publication Date: 2018-04-12
- Inventor: Qing Liu , Ruilong Xie , Chun-chen Yeh
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES, INC. , STMicroelectronics, Inc.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/417 ; H01L21/324 ; H01L21/02 ; H01L21/306
Abstract:
A method of fabricating features of a vertical transistor include performing a first etch process to form a first portion of a fin in a substrate; depositing a spacer material on sidewalls of the first portion of the fin; performing a second etch process using the spacer material as a pattern to elongate the fin and form a second portion of the fin in the substrate, the second portion having a width that is greater than the first portion; oxidizing a region of the second portion of the fin beneath the spacer material to form an oxidized channel region; and removing the oxidized channel region to form a vacuum channel.
Public/Granted literature
- US10243074B2 Vertical vacuum channel transistor Public/Granted day:2019-03-26
Information query
IPC分类:
