- 专利标题: OPTIMAL WRITE METHOD FOR A FERROELECTRIC MEMORY
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申请号: US15391996申请日: 2016-12-28
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公开(公告)号: US20180122453A1公开(公告)日: 2018-05-03
- 发明人: Tianhong Yan
- 申请人: AUCMOS Technologies USA, Inc.
- 主分类号: G11C11/22
- IPC分类号: G11C11/22
摘要:
A method for programming a memory cell to a predetermined programmed state includesL (a) preparing the memory cell for a write operation; (b) sending a train of programming pulses, each programming pulse being a pulse having a magnitude sufficient to program the memory cell to the predetermined programmed state; (c) preparing the memory cell for a read operation; and (d) reading the programmed state of the memory cell to ascertain whether or not the predetermined programmed state is in the memory cell. In one embodiment, the method repeats steps (a)-(d), when the programmed state of the memory cell is not the predetermined programmed state. In one embodiment, the number of times steps (a)-(d) is repeated is determined based on both a probability of successfully writing the memory cell using a single write pulse and a probability of chaotic switching.
公开/授权文献
- US10283183B2 Optimal write method for a ferroelectric memory 公开/授权日:2019-05-07
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