Invention Application
- Patent Title: RING-TYPE FIELD EFFECT TRANSISTOR FOR TERAHERTZ WAVE DETECTION, WHICH USES GATE METAL AS ANTENNA
-
Application No.: US15561940Application Date: 2015-12-31
-
Publication No.: US20180122912A1Publication Date: 2018-05-03
- Inventor: Kyung Rok KIM , Min Woo RYU , Sang Hyo AHN
- Applicant: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- International Application: PCT/KR2015/014578 WO 20151231
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/423 ; H01L29/10 ; H01L29/08 ; H01L31/112 ; H01L29/78
Abstract:
A ring-type FET may include a silicon base, a source formed on a portion of the silicon base through doping, a channel formed to encompass the source on a plane, a drain formed outside the channel, a dielectric layer formed on the source, the channel and the drain, and a gate provided on the dielectric layer, wherein a center of the source is spaced apart from a center of the channel, and the gate is formed of a metal material, disposed above the channel and configured to cover an upper face of the channel and overlap a portion of the source and a portion of the drain.
Public/Granted literature
- US10020370B2 Ring-type field effect transistor for terahertz wave detection, which uses gate metal as antenna Public/Granted day:2018-07-10
Information query
IPC分类:
