- 专利标题: HIGH SILICA CONTENT SUBSTRATE SUCH AS FOR USE IN THIN-FILM BATTERY
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申请号: US15461953申请日: 2017-03-17
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公开(公告)号: US20180123160A1公开(公告)日: 2018-05-03
- 发明人: Daniel Warren Hawtof , Archit Lal
- 申请人: Corning Incorporated
- 主分类号: H01M10/04
- IPC分类号: H01M10/04 ; H01M4/66 ; H01M4/485 ; H01M4/505 ; H01M4/525 ; H01M10/0585 ; H01M10/0525 ; H01M6/40 ; H01M4/38 ; H01M4/587 ; H01M4/58 ; H01M4/02
摘要:
A high silica content substrate, such as for a thin-film battery, is provided. The substrate has a high silica content, such as over 90% by weight silica, and is thin, for example less than 500 μm. The substrate may include a surface with a topography or profile that facilitates bonding with a coating layer, such as a coating of an electrochemical battery material. The high silica content substrate may be flexible, have high temperature resistance, high strength and/or be non-reactive. The substrate may be suitable for use in the high temperature environments used in many chemical deposition or formation processes, such as electrochemical battery material formation processes.