发明申请
- 专利标题: BASEBAND AMPLIFIER CIRCUIT
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申请号: US15798961申请日: 2017-10-31
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公开(公告)号: US20180123536A1公开(公告)日: 2018-05-03
- 发明人: Charaf Eddine Souria , Cristian Pavao Moreira
- 申请人: NXP USA, Inc.
- 优先权: EP16306434.8 20161101
- 主分类号: H03F3/45
- IPC分类号: H03F3/45 ; G01S7/02
摘要:
A baseband amplifier circuit comprising a single-ended to differential converter followed by at least one boosted follower amplifier. The boosted follower amplifier comprises a first transconductance device arranged to control a first current between a first supply node and a first output node in response to a voltage at a first input node, a second transconductance device arranged to control a second current between the first output node and a second supply node in response to a voltage at a second input node, a third transconductance device arranged to control a third current between the first supply node and a second output node in response to a voltage at a third input node, and a fourth transconductance device arranged to control a fourth current between the second output node of the boosted follower amplifier and the second supply node in response to a voltage at a fourth input node.
公开/授权文献
- US3122359A Stove for blast furnace operation 公开/授权日:1964-02-25
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