Invention Application
- Patent Title: MEMORY SYSTEM PERFORMING ERROR CORRECTION OF ADDRESS MAPPING TABLE
-
Application No.: US15718143Application Date: 2017-09-28
-
Publication No.: US20180129563A1Publication Date: 2018-05-10
- Inventor: Hyunsik KIM , Tae-Hwan KIM
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-do
- Priority: KR10-2016-0147679 20161107
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F12/1009 ; G11C29/52

Abstract:
A memory system includes a nonvolatile memory device, a dynamic random access memory (DRAM) configured to store an address mapping table for an access to the nonvolatile memory device, and a controller configured to store, in the DRAM, the address mapping table that is divided in units of address mapping data, each of the units having a size of an interface of the DRAM, read, from the stored address mapping table, target address mapping data corresponding to a logical address that is received from a host, the target address mapping data including a target parity and physical addresses of the nonvolatile memory device, and perform an error correction on the read target address mapping data, using the target parity.
Public/Granted literature
- US10514981B2 Memory system performing error correction of address mapping table Public/Granted day:2019-12-24
Information query