A method of forming an interconnect that includes providing a sacrificial trace structure using an additive forming method and forming a continuous seed metal layer on the sacrificial trace structure. The sacrificial trace structure is removed, and the continuous seed metal layer remains. An interconnect metal layer is formed on the continuous seed layer, and an electrically insulating material layer is formed on the interconnect metal layer. An electrically conductive support material is formed to encapsulate a majority of the interconnect metal layer, wherein the ends of the interconnect metal layer are exposed through opposing surfaces of the electrically conductive support material to provide an interconnect extending through the electrically conductive support material.