- 专利标题: PHOTONIC DEVICES AND METHODS OF USING AND MAKING PHOTONIC DEVICES
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申请号: US15718045申请日: 2017-09-28
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公开(公告)号: US20180131155A1公开(公告)日: 2018-05-10
- 发明人: Purnawirman Purnawirman , Michael R. Watts , Ehsan Shah Hosseini , Jonathan B. Bradley , Jie Sun , Matteo Cherchi
- 申请人: Purnawirman Purnawirman , Michael R. Watts , Ehsan Shah Hosseini , Jonathan B. Bradley , Jie Sun , Matteo Cherchi
- 主分类号: H01S3/063
- IPC分类号: H01S3/063 ; H01S3/16 ; H01S3/091 ; H01S3/17 ; H01S3/08 ; H01S3/083 ; H01S3/094 ; H01S3/23 ; H01S3/105
摘要:
Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).