Invention Application
- Patent Title: INTERCONNECT STRUCTURE INCLUDING AIR GAP
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Application No.: US15353850Application Date: 2016-11-17
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Publication No.: US20180138076A1Publication Date: 2018-05-17
- Inventor: Tai-I Yang , Wei-Chen Chu , Hsin-Ping Chen , Chih-Wei Lu , Chung-Ju Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L23/532
Abstract:
A method of forming a semiconductor structure is provided. A conductive layer is formed over a substrate. The conductive layer is selectively etched to form a first conductive portion, a second conductive portion, and a spacing between the first conductive portion and the second conductive portion. A dielectric layer is formed over the first conductive portion, the second conductive portion, and the spacing, such that an air gap is formed in the spacing between the first and second conductive portions and is sealed by the dielectric layer.
Public/Granted literature
- US10340181B2 Interconnect structure including air gap Public/Granted day:2019-07-02
Information query
IPC分类:
