- 专利标题: TRANSISTOR, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
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申请号: US15794464申请日: 2017-10-26
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公开(公告)号: US20180138208A1公开(公告)日: 2018-05-17
- 发明人: Daigo ITO , Yutaka OKAZAKI , Takahisa ISHIYAMA
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 优先权: JP2016-220496 20161111
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L27/115 ; H01L29/786
摘要:
To provide a semiconductor device capable of retaining data for a long time. The semiconductor device includes a first transistor, an insulator covering the first transistor, and a second transistor over the insulator. The first transistor includes a first gate electrode, a second gate electrode overlapping with the first gate electrode, and a semiconductor between the first gate electrode and the second gate electrode. The first gate electrode is electrically connected to one of a source and a drain of the second transistor.
公开/授权文献
- US10685983B2 Transistor, semiconductor device, and electronic device 公开/授权日:2020-06-16
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