公开(公告)号：US20200185528A1

公开(公告)日：2020-06-11

申请号：US16634493

申请日：2018-07-26

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Daisuke MATSUBAYASHI ,  Ryota HODO ,  Daigo ITO ,  Hiroaki HONDA ,  Satoru OKAMOTO

IPC分类号： H01L29/786 ,  G11C11/4091 ,  H01L27/108 ,  H01L27/105 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/24

摘要： A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide; a first conductor and a second conductor over the oxide; a third conductor over the oxide; a first insulator provided between the oxide and the third conductor and covering a side surface of the third conductor; a second insulator over the third conductor and the first insulator; a third insulator positioned over the first conductor and at a side surface of the second insulator; a fourth insulator positioned over the second conductor and at a side surface of the second insulator; a fourth conductor being in contact with a top surface and a side surface of the third insulator and electrically connected to the first conductor; and a fifth conductor being in contact with a top surface and a side surface of the fourth insulator and electrically connected to the second conductor. The first insulator is between the third insulator and the third conductor, and between the fourth insulator and the third conductor.

公开(公告)号：US20200105942A1

公开(公告)日：2020-04-02

申请号：US16703175

申请日：2019-12-04

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Daigo ITO ,  Takahisa ISHIYAMA ,  Katsuaki TOCHIBAYASHI ,  Kazuya HANAOKA

IPC分类号： H01L29/786 ,  H01L21/67 ,  H01L27/146 ,  H01L29/04 ,  H01L29/423 ,  H01L29/66 ,  H01L27/12

摘要： The semiconductor device includes a first insulating layer; a first oxide insulating layer over the first insulating layer; an oxide semiconductor layer over the first oxide insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a second oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a gate insulating layer over the second oxide insulating layer; a gate electrode layer over the gate insulating layer; a second insulating layer over the first insulating layer the source electrode layer, the drain electrode layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer, and a third insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, and the second insulating layer.

公开(公告)号：US20150311074A1

公开(公告)日：2015-10-29

申请号：US14734492

申请日：2015-06-09

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Daigo ITO ,  Yuichi SATO ,  Kosei NODA

IPC分类号： H01L21/02

CPC分类号： H01L29/66477 ,  H01L21/02565 ,  H01L21/265 ,  H01L29/66969 ,  H01L29/7869

摘要： An oxide semiconductor film is formed over a substrate. A sacrifice film is formed to such a thickness that the local maximum of the concentration distribution of an injected substance injected into the oxide semiconductor film in the depth direction of the oxide semiconductor film is located in a region from an interface between the substrate and the oxide semiconductor film to a surface of the oxide semiconductor film. Oxygen ions are injected as the injected substance into the oxide semiconductor film through the sacrifice film at such an acceleration voltage that the local maximum of the concentration distribution of the injected substance in the depth direction of the oxide semiconductor film is located in the region, and then the sacrifice film is removed. Further, a semiconductor device is manufactured using the oxide semiconductor film.

摘要翻译： 在基板上形成氧化物半导体膜。 牺牲膜形成为使得在氧化物半导体膜的深度方向上注入到氧化物半导体膜中的注入物质的浓度分布的局部最大值位于从衬底和氧化物之间的界面的区域中的局部最大值 半导体膜到氧化物半导体膜的表面。 将氧离子作为注入物质通过牺牲膜以这样的加速电压注入到氧化物半导体膜中，使得注入物质在氧化物半导体膜的深度方向上的浓度分布的局部最大值位于该区域中，以及 然后去除牺牲膜。 此外，使用氧化物半导体膜制造半导体器件。

公开(公告)号：US20180138208A1

公开(公告)日：2018-05-17

申请号：US15794464

申请日：2017-10-26

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Daigo ITO ,  Yutaka OKAZAKI ,  Takahisa ISHIYAMA

IPC分类号： H01L27/12 ,  H01L27/115 ,  H01L29/786

摘要： To provide a semiconductor device capable of retaining data for a long time. The semiconductor device includes a first transistor, an insulator covering the first transistor, and a second transistor over the insulator. The first transistor includes a first gate electrode, a second gate electrode overlapping with the first gate electrode, and a semiconductor between the first gate electrode and the second gate electrode. The first gate electrode is electrically connected to one of a source and a drain of the second transistor.

公开(公告)号：US20180033807A1

公开(公告)日：2018-02-01

申请号：US15658513

申请日：2017-07-25

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shinpei MATSUDA ,  Daigo ITO ,  Daisuke MATSUBAYASHI ,  Yasutaka SUZUKI ,  Etsuko KAMATA ,  Yutaka SHIONOIRI ,  Shuhei NAGATSUKA

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L27/105 ,  H01L29/423

CPC分类号： H01L27/1251 ,  H01L27/1052 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A highly reliable semiconductor device capable of retaining data for a long period is provided. The transistor includes a first gate electrode, a first gate insulator over the first gate electrode, a first oxide and a second oxide over the first gate insulator, a first conductor over the first oxide, a second conductor over the second oxide, a third oxide covering the first gate insulator, the first oxide, the first conductor, the second oxide, and the second conductor, a second gate insulator over the third oxide, and a second gate electrode over the second gate insulator. An end portion of the second gate electrode is positioned between an end portion of the first conductor and an end portion of the second conductor in a channel length direction.

公开(公告)号：US20160329434A1

公开(公告)日：2016-11-10

申请号：US15144123

申请日：2016-05-02

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Daigo ITO ,  Takahisa ISHIYAMA ,  Katsuaki TOCHIBAYASHI ,  Kazuya HANAOKA

IPC分类号： H01L29/786 ,  G11C13/00 ,  G06F1/06 ,  H01L29/66

CPC分类号： H01L29/78693 ,  H01L21/67207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/1464 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： The semiconductor device includes a first insulating layer; a first oxide insulating layer over the first insulating layer; an oxide semiconductor layer over the first oxide insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a second oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a gate insulating layer over the second oxide insulating layer; a gate electrode layer over the gate insulating layer; a second insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer; and a third insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, and the second insulating layer.

摘要翻译： 半导体器件包括第一绝缘层; 第一绝缘层上的第一氧化物绝缘层; 在所述第一氧化物绝缘层上的氧化物半导体层; 氧化物半导体层上的源电极层和漏电极层; 氧化物半导体层上的第二氧化物绝缘层，源电极层和漏电极层; 在所述第二氧化物绝缘层上的栅极绝缘层; 栅绝缘层上的栅电极层; 第一绝缘层上的第二绝缘层，源极电极层，漏极电极层，第二氧化物绝缘层，栅极绝缘层和栅极电极层; 以及第一绝缘层上的第三绝缘层，源极电极层，漏极电极层和第二绝缘层。

公开(公告)号：US20130137232A1

公开(公告)日：2013-05-30

申请号：US13686204

申请日：2012-11-27

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Daigo ITO ,  Yuichi SATO ,  Kosei NODA

IPC分类号： H01L29/66 ,  H01L21/265

CPC分类号： H01L29/66477 ,  H01L21/02565 ,  H01L21/265 ,  H01L29/66969 ,  H01L29/7869

摘要： An oxide semiconductor film is formed over a substrate. A sacrifice film is formed to such a thickness that the local maximum of the concentration distribution of an injected substance injected into the oxide semiconductor film in the depth direction of the oxide semiconductor film is located in a region from an interface between the substrate and the oxide semiconductor film to a surface of the oxide semiconductor film. Oxygen ions are injected as the injected substance into the oxide semiconductor film through the sacrifice film at such an acceleration voltage that the local maximum of the concentration distribution of the injected substance in the depth direction of the oxide semiconductor film is located in the region, and then the sacrifice film is removed. Further, a semiconductor device is manufactured using the oxide semiconductor film.

公开(公告)号：US20210242207A1

公开(公告)日：2021-08-05

申请号：US17052589

申请日：2019-05-08

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Daigo ITO ,  Ryota HODO ,  Yoshinori ANDO ,  Tetsuya KAKEHATA

IPC分类号： H01L27/108

摘要： A semiconductor device that can be miniaturized or highly integrated is provided.
A first conductor to a fourth conductor, a first insulator and a second insulator, and a first oxide and a second oxide are included, the first insulator is positioned over the first conductor, the first oxide is positioned over the first insulator, a first opening that reaches the first conductor is provided in the first insulator and the first oxide, the second conductor and the third conductor isolated from each other are positioned over the first oxide, at least part of the third conductor overlaps with the first opening and is in contact with a top surface of the first conductor, the second oxide is positioned over the first oxide so as to at least partly overlap with a region between the second conductor and the third conductor, the second insulator is positioned over the second oxide, and the fourth conductor is positioned over the second insulator.

公开(公告)号：US20180197997A1

公开(公告)日：2018-07-12

申请号：US15864033

申请日：2018-01-08

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Daigo ITO ,  Daisuke Matsubayashi ,  Masaharu Nagai ,  Yoshiaki Yamamoto ,  Takashi Hamada ,  Yutaka Okazaki ,  Shinya Sasagawa ,  Motomu Kurata ,  Naoto Yamade

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L21/425 ,  H01L21/46 ,  H01L27/12

CPC分类号： H01L29/78693 ,  H01L21/425 ,  H01L21/46 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7782 ,  H01L29/7854 ,  H01L29/7855 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element N (N is phosphorus, argon, or xenon).

公开(公告)号：US20170288064A1

公开(公告)日：2017-10-05

申请号：US15628699

申请日：2017-06-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Daigo ITO ,  Daisuke MATSUBAYASHI ,  Masaharu NAGAI ,  Yoshiaki YAMAMOTO ,  Takashi HAMADA ,  Yutaka OKAZAKI ,  Shinya SASAGAWA ,  Motomu KURATA ,  Naoto YAMADE

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/46 ,  H01L29/66 ,  H01L21/425

CPC分类号： H01L29/78693 ,  H01L21/425 ,  H01L21/46 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7782 ,  H01L29/7854 ,  H01L29/7855 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element N (N is phosphorus, argon, or xenon).