- 专利标题: APPARATUS FOR PLASMA ATOMIC LAYER DEPOSITION
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申请号: US15575360申请日: 2016-04-19
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公开(公告)号: US20180148842A1公开(公告)日: 2018-05-31
- 发明人: Tatsuya MATSUMOTO , Keisuke WASHIO
- 申请人: THE JAPAN STEEL WORKS, LTD.
- 申请人地址: JP Shinagawa-ku, Tokyo
- 专利权人: THE JAPAN STEEL WORKS, LTD.
- 当前专利权人: THE JAPAN STEEL WORKS, LTD.
- 当前专利权人地址: JP Shinagawa-ku, Tokyo
- 优先权: JP2015-106858 20150526
- 国际申请: PCT/JP2016/062402 WO 20160419
- 主分类号: C23C16/50
- IPC分类号: C23C16/50 ; C23C16/455 ; C23C16/44
摘要:
An apparatus for plasma atomic layer deposition includes a tubular, insulating injector adhesion preventive member mountable to a gas-introducing opening section from inside a film forming chamber, a tubular, insulating exhaust adhesion preventive member mountable to an exhaust opening section from inside the film forming chamber, and an insulating film forming chamber adhesion preventive member mountable to an inner wall side of the film forming chamber. The injector adhesion preventive member and the exhaust adhesion preventive member are separated from each of a plate electrode and a counter electrode side, and the film forming chamber adhesion preventive member is disposed on each side of the injector adhesion preventive member and the exhaust adhesion preventive member to be separated from each of the plate electrode and the counter electrode side. The apparatus further includes an upper and lower inert-gas supply port that purges inert gas toward inside the film forming chamber.
公开/授权文献
- US10519549B2 Apparatus for plasma atomic layer deposition 公开/授权日:2019-12-31
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