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公开(公告)号：US20180148842A1
公开(公告)日：2018-05-31
申请号：US15575360
申请日：2016-04-19
发明人： Tatsuya MATSUMOTO , Keisuke WASHIO
IPC分类号： C23C16/50 , C23C16/455 , C23C16/44
CPC分类号： C23C16/50 , C23C16/308 , C23C16/4401 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/45563 , C23C16/45565 , H01J37/3244 , H01J37/32477 , H01J37/32486 , H01J37/32834 , H01J37/3288
摘要： An apparatus for plasma atomic layer deposition includes a tubular, insulating injector adhesion preventive member mountable to a gas-introducing opening section from inside a film forming chamber, a tubular, insulating exhaust adhesion preventive member mountable to an exhaust opening section from inside the film forming chamber, and an insulating film forming chamber adhesion preventive member mountable to an inner wall side of the film forming chamber. The injector adhesion preventive member and the exhaust adhesion preventive member are separated from each of a plate electrode and a counter electrode side, and the film forming chamber adhesion preventive member is disposed on each side of the injector adhesion preventive member and the exhaust adhesion preventive member to be separated from each of the plate electrode and the counter electrode side. The apparatus further includes an upper and lower inert-gas supply port that purges inert gas toward inside the film forming chamber.
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公开(公告)号：US20210135169A1
公开(公告)日：2021-05-06
申请号：US16492143
申请日：2018-03-07
摘要： An object is to improve performance of a protection film for an organic EL device. A forming method of the protection film for an organic EL device includes the steps of: (a) forming an organic EL device over a flexible substrate; and (b) forming a protection film including an SiOC film so as to cover the organic EL device. Moreover, the SiOC film is formed by an ALD method using a compound containing Si and C as a material, the compound containing Si and C has at least one or more C atoms in a main chain between Si atom and Si atom, and amino groups are respectively bonded to the Si atoms on both ends of the main chain. According to this method, carbon (C) can be effectively taken into an SiO film to be formed. This SiOC film has a moisture barrier property and flexibility. Thus, it is possible to protect the organic EL device from moisture, and its bending resistance can be improved. Moreover, the degree of flexibility can be adjusted by adjusting the number of C atoms in the main chain between Si atom and Si atom.
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公开(公告)号：US20180155833A1
公开(公告)日：2018-06-07
申请号：US15575357
申请日：2016-04-19
发明人： Tatsuya MATSUMOTO , Keisuke WASHIO
IPC分类号： C23C16/455
摘要： A device for atomic layer deposition includes: an injector installed to an opening of a film deposition chamber; and an injector adhesion preventive member installed by insertion into the opening, wherein the injector includes an injector raw material gas supply path, an injector reactant gas supply path, and an injector inert gas supply path, the respective paths being partitioned from each other, the injector adhesion preventive member includes an adhesion preventive member raw material gas supply path, an adhesion preventive member reactant gas supply path, and an adhesion preventive member inert gas supply path, the respective paths being partitioned from each other, and the adhesion preventive member inert gas supply path is provided such that the inert gas flows in a clearance between an outer peripheral side of the injector adhesion preventive member and an inner peripheral side of the opening.
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4.发明申请公开(公告)号：US20180148837A1
公开(公告)日：2018-05-31
申请号：US15575359
申请日：2016-04-19
发明人： Tatsuya MATSUMOTO , Keisuke WASHIO
IPC分类号： C23C16/455 , C23C16/44
CPC分类号： C23C16/45544 , C23C16/4401 , C23C16/4412 , C23C16/45502 , C23C16/45536
摘要： An apparatus for atomic layer deposition includes a film deposition chamber, a tubular exhaust pipe connecting section mounted to an outer side of an opening section provided in the film deposition chamber, and a tubular exhaust adhesion preventive member located inside the film deposition chamber and inserted into and mounted on the opening section. The exhaust pipe connecting section is provided with an inert-gas supply passage and an inert-gas supply port, both in the connecting section. The exhaust adhesion preventive member is provided with an inert-gas supply passage formed of a gap between each of an inner peripheral surface of the opening section and an inner wall of the film deposition chamber around the opening section, and the adhesion preventive member, and an inert-gas discharge port provided in the inert-gas supply passage, and from which the inert gas flows out into the film deposition chamber.
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公开(公告)号：US20190185998A1
公开(公告)日：2019-06-20
申请号：US16329192
申请日：2017-04-24
发明人： Keisuke WASHIO , Tatsuya MATSUMOTO
IPC分类号： C23C16/44 , H01L51/50 , H01L51/56 , C23C16/455
CPC分类号： C23C16/4401 , C23C16/44 , C23C16/455 , C23C16/45536 , C23C16/45544 , H01L21/31 , H01L51/50 , H01L51/5012 , H01L51/56 , H05B33/04 , H05B33/10 , H05H1/46
摘要： A plasma atomic layer deposition apparatus capable of improving a film quality of a film formed on a substrate is provided. The atomic layer deposition apparatus is a plasma atomic layer deposition apparatus configured to form the film on the substrate is in an atomic layer unit by generating plasma discharge between a lower electrode BE holding the substrate 15 and a facing upper electrode UE, and has a deposition prevention member CTM made of an insulator surrounding the upper electrode UE but being away therefrom in a plan view.
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公开(公告)号：US20190177842A1
公开(公告)日：2019-06-13
申请号：US16324556
申请日：2017-04-24
发明人： Keisuke WASHIO , Tatsuya MATSUMOTO
IPC分类号： C23C16/455 , C23C16/458
摘要： An atomic layer deposition apparatus includes a film-forming container 11 in which a film-forming process is performed, a vertically movable stage 14 configured to hold a substrate 100, a susceptor 50 held on the stage 14 and being configured to hold the substrate 100, and a stage stopper 17 configured to stop rising of the stage 14 and, when in contact with the susceptor 50, partitioning a film-forming space S in which the film-forming process is performed and a transporting space in which transport of the substrate 100 is performed. Further, the susceptor 50 includes an upper susceptor substrate holding portion 52B configured to hold the substrate 100, and an upper susceptor peripheral portion 52A arranged in a periphery of the upper susceptor substrate holding portion 52B, wherein a susceptor deposition prevention member 15 is provided on the upper susceptor peripheral portion 52A.
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公开(公告)号：US20180155823A1
公开(公告)日：2018-06-07
申请号：US15575358
申请日：2016-04-19
发明人： Tatsuya MATSUMOTO , Keisuke WASHIO
IPC分类号： C23C16/04 , C23C16/455 , C23C16/458
CPC分类号： C23C16/042 , C23C14/564 , C23C16/308 , C23C16/4405 , C23C16/4412 , C23C16/45521 , C23C16/45536 , C23C16/45544 , C23C16/45565 , C23C16/4557 , C23C16/4558 , C23C16/458 , C23C16/4585 , C23C16/509 , H01L21/02178 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/68735 , H01L21/68742
摘要： A device for atomic layer deposition includes: a film deposition chamber; a stage installed inside the film deposition chamber; a susceptor that holds, on the stage, a substrate; a mask disposed on the substrate, the mask being sized to encompass the substrate; a mask pin that supports the mask; and a mask pin hole bored through the stage and the susceptor vertically, and allows the mask pin to be inserted in a vertically movable manner, wherein the susceptor has a susceptor body having a holding surface of the substrate, and a susceptor peripheral edge located around the susceptor body and having a height lower than the holding surface, the mask pin hole is opened in the susceptor peripheral edge, and in the susceptor peripheral edge, an inert gas supply port that releases gas upward is provided around the holding surface in a surrounding area of the mask.
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8.发明申请公开(公告)号：US20180053915A1
公开(公告)日：2018-02-22
申请号：US15361444
申请日：2016-11-27
CPC分类号： H01L51/5256 , H01L51/0097 , H01L51/56
摘要： A method of manufacturing a display device having an organic EL device includes the steps of : forming an organic EL device over a substrate; and forming a protection film so as to cover the organic EL device. The protection film is made of a laminated film of a first insulating film containing Si, a second insulating film containing Al and a third insulating film containing Si. The step of forming the protection film includes the steps of: forming the first insulating film by a plasma CVD method so as to cover the organic EL device; forming the second insulating film over the first insulating film by an ALD method; and forming the third insulating film over the second insulating film by a plasma CVD method.
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公开(公告)号：US20210166922A1
公开(公告)日：2021-06-03
申请号：US17149696
申请日：2021-01-14
发明人： Keisuke WASHIO , Masao NAKATA , Tatsuya MATSUMOTO , Junichi SHIDA
IPC分类号： H01J37/32 , C23C16/04 , C23C16/455 , H01L51/52 , H01L51/56 , C23C16/40 , H01L21/31 , H01L21/02
摘要： In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.
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10.发明申请公开(公告)号：US20200013593A1
公开(公告)日：2020-01-09
申请号：US16490529
申请日：2017-10-31
发明人： Keisuke WASHIO , Masao NAKATA , Tatsuya MATSUMOTO , Junichi SHIDA
IPC分类号： H01J37/32 , H01L51/52 , H01L51/56 , C23C16/455 , C23C16/04
摘要： In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.
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