Invention Application
- Patent Title: SEMICONDUCTOR DEVICE HAVING A DISCONTINUED PART BETWEEN A FIRST INSULATING FILM AND SECOND INSULATING FILM
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Application No.: US15897561Application Date: 2018-02-15
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Publication No.: US20180174900A1Publication Date: 2018-06-21
- Inventor: Yoshikazu TSUNEMINE , Takayuki IGARASHI
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2015-121024 20150616
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532 ; H01L23/522
Abstract:
A semiconductor device, in which an increase in the size of a product can be suppressed and a withstand voltage between wiring layers can be improved, and a manufacturing method thereof are provided. A discontinued part, in which the interface between an interlayer insulating film and a passivation film is discontinued, is formed between a first wiring layer and a second wiring layer that are adjacent to each other with a space therebetween. Both the interlayer insulating film and the passivation film face an air gap in the discontinued part.
Public/Granted literature
- US3148694A Fluid ejector valve Public/Granted day:1964-09-15
Information query
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