Invention Application
- Patent Title: PLANARIZED INTERLAYER DIELECTRIC WITH AIR GAP ISOLATION
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Application No.: US15897465Application Date: 2018-02-15
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Publication No.: US20180174977A1Publication Date: 2018-06-21
- Inventor: VietHa Nguyen , Wookyung You , Inoue Naoya , Hak-Sun Lee , Byung-Kwon Cho , Songyi Han , Jongmin Baek , Jiwon Kang , Byunghee Kim , Young-Ju Park , Sanghoon Ahn , Jiwon Yun , Naein Lee , YoungWoo Cho
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2015-0178376 20151214
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/522

Abstract:
A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.
Public/Granted literature
- US10186485B2 Planarized interlayer dielectric with air gap isolation Public/Granted day:2019-01-22
Information query
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