Invention Application
- Patent Title: PLASMA SYSTEM AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME
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Application No.: US15826665Application Date: 2017-11-29
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Publication No.: US20180182600A1Publication Date: 2018-06-28
- Inventor: MinKyu SOHN , DOUGYONG SUNG , SeungBo SHIM , JaeWon JEONG , PETER BYUNGHOON HAN
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2016-0181309 20161228
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67

Abstract:
A plasma system includes an electrode and an RF power supply unit supplying an RF power to the electrode to generate a plasma on the electrode. The RF power is provided in a pulse having a valley-shaped portion during an on-pulsing interval of the pulse. The valley-shaped portion is defined by a valley angle and a valley width. By controlling the valley angle and the valley width, the plasma may control the etching of a substrate.
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