- 专利标题： BENT-BRIDGE SEMICONDUCTIVE APPARATUS
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申请号： US15394388申请日： 2016-12-29
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公开(公告)号： US20180190589A1公开(公告)日： 2018-07-05
- 发明人: Bernd Waidhas , Stephan Stoeckl , Andreas Wolter , Reinhard Mahnkopf , Georg Seidemann , Thomas Wagner , Laurent Millou
- 申请人： Bernd Waidhas , Stephan Stoeckl , Andreas Wolter , Reinhard Mahnkopf , Georg Seidemann , Thomas Wagner , Laurent Millou
- 主分类号： H01L23/538
- IPC分类号： H01L23/538 ; H01L25/065 ; H01L23/00 ; H01L21/48 ; H01L23/053
摘要：
A bent-bridge semiconductive apparatus includes a silicon bridge that is integral to a semiconductive device and the silicon bridge is deflected out of planarity. The silicon bridge may couple two semiconductive devices, all of which are from an integral processed die.
公开/授权文献
- US10141265B2 Bent-bridge semiconductive apparatus 公开/授权日：2018-11-27