Invention Application
- Patent Title: Bidirectional Normally-Off III-V Devices and Circuits
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Application No.: US15938922Application Date: 2018-03-28
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Publication No.: US20180219008A1Publication Date: 2018-08-02
- Inventor: Gerhard Prechtl , Bernhard Zojer
- Applicant: Infineon Technologies Austria AG
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/423 ; H01L27/088 ; H01L29/778 ; H01L21/8258 ; H01L27/085 ; H01L29/20 ; H01L29/08

Abstract:
Circuits and devices for bidirectional normally-off switches are described. A circuit for a bidirectional normally-off switch includes a depletion mode transistor and an enhancement mode transistor. The depletion mode transistor includes a first source/drain node, a second source/drain node, a first gate, and a second gate. The enhancement mode transistor includes a third source/drain node and a fourth source/drain node, and a third gate. The third source/drain node is coupled to the first source/drain node.
Public/Granted literature
- US10411008B2 System and method for depletion mode and enhancement mode transistors Public/Granted day:2019-09-10
Information query
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